svd8n60t/SVD8N60F hangzhou?silan?microelectronics?co.,ltd rev:1.0?????????????2009.07.09 http://www.silan.com.cn ??????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????page?1?of?7 ordering?specifications part?no. package marking shipping svd8n60t to-220-3l svd8n60t 50unit/tube SVD8N60F to-220f-3l SVD8N60F 50unit/tube absolute?maximum?ratings ?(t c =25 c?unless?otherwise?noted) parameter symbol svd8n60t SVD8N60F unit drain-source?voltage v ds 600 v gate-source?voltage v gs 30 v drain?current i d 8.0 a drain?current?pulsed i dm 28 a 147 48 w power?dissipation(t c =25 c) ???????????????????????????????-derate?above?25 c p d 1.18 0.38 w/ c single?pulsed?avalanche?energy??(note?1) e as 530 mj repetitive?avalanche?energy e ar 14.2 mj operation?junction?temperature t j -55 +150 c storage?temperature tstg -55 +150 c 8a,?600v?n-channel?mosfet general?description svd8n60t/f? is? an? n-channel? enhancement? mode? power mos field? effect? transistor? which? is? produced? using? silan? proprietary s-rin tm ? structure? dmos? technology.? the? improved? planar? stripe cell?and?the?improved?guarding?ring?terminal?have ?been?especially tailored?to?minimize?on-state?resistance, ?provide?superior?switching performance,? and? withstand? high? energy? pulse? in? the? avalanche and?commutation?mode. these?devices?are?widely?used?in?ac-dc?power?suppliers,?dc- dc converters?and?h-bridge?pwm?motor?drivers. features * ? 8a,600v,r ds(on) ? typ ? =0.96 w @v gs =10v * ? low?gate?charge * ? low?crss * ? fast?switching * ? improved?dv/dt?capability www.datasheet.co.kr datasheet pdf - http://www..net/
svd8n60t/SVD8N60F hangzhou?silan?microelectronics?co.,ltd rev:1.0?????????????2009.07.09 http://www.silan.com.cn ??????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????page?2?of?7 thermal?characteristics parameter symbol svd8n60t SVD8N60F unit thermal?resistance,?junction-to-case r jc 0.85 2.6 c/w thermal?resistance,?junction-to-ambient r ja 62.5 62.5 c/w electrical?characteristics?(tc=25 c?unless?otherwise?noted) parameter symbol test?conditions min. typ. max. unit drain?-source?breakdown?voltage b vdss ?v gs =0v,?i d =250a 600 -- -- v drain-source?leakage?current i dss v ds =600v,?v gs =0v -- -- 10 a gate-source?leakage?current i gss v gs =30v,?v ds =0v -- -- 100 na gate?threshold?voltage v gs(th) ?v gs =?v ds ,?i d =250a 2.0 -- 4.0 v static?drain-?source?on?state resistance r ds(on) ?v gs =10v,?i d =3.5a -- 0.96 1.2 w input?capacitance c iss -- 1095 output?capacitance c oss -- 93 -- reverse?transfer?capacitance c rss v ds =25v,v gs =0v, f=1.0mhz -- 2 -- pf turn-on?delay?time t d(on) -- 39 -- turn-on?rise?time t r -- 29 -- turn-off?delay?time t d(off) -- 248 -- turn-off?fall?time t f v dd =300v,i d =7.0a, r g =25 w ???????????????????????(note?2,3) -- 36 -- ns total?gate?charge q g -- 26.8 -- gate-source?charge q gs -- 5.1 -- gate-drain?charge q gd v ds =480v,i d =7.0a, v gs =10v ???????????????????????(note?2,3) -- 8.5 -- nc source-drain?diode?ratings?and?characteristics parameter symbol test?conditions min. typ. max. unit continuous?source?current i s -- -- 8.0 pulsed?source?current i sm integral? reverse? p-n junction? diode? in? the mosfet -- -- 28 a diode?forward?voltage v sd i s =8.0a,v gs =0v -- -- 1.4 v reverse?recovery?time t rr -- 365 -- ns reverse?recovery?charge q rr i s =8.0a,v gs =0v, di f /dt=100a/s -- 3.4 -- c notes: 1.? l=19.5mh,i as =7.0a,v dd =50v,r g =25 w ,starting?t j =25 c; 2. pulse?test:?pulse?width? ? 300 s,duty?cycle ? 2%; 3. essentially?independent?of?operating?temperature. www.datasheet.co.kr datasheet pdf - http://www..net/
svd8n60t/SVD8N60F hangzhou?silan?microelectronics?co.,ltd rev:1.0?????????????2009.07.09 http://www.silan.com.cn ??????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????page?3?of?7 nomenclature typical?characteristics www.datasheet.co.kr datasheet pdf - http://www..net/
svd8n60t/SVD8N60F hangzhou?silan?microelectronics?co.,ltd rev:1.0?????????????2009.07.09 http://www.silan.com.cn ??????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????page?4?of?7 typical?characteristics?(continued) www.datasheet.co.kr datasheet pdf - http://www..net/
svd8n60t/SVD8N60F hangzhou?silan?microelectronics?co.,ltd rev:1.0?????????????2009.07.09 http://www.silan.com.cn ??????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????page?5?of?7 typical?test?circuit 200nf 12 v 50 .? 300nf v gs 3 ma v ds v gs 10 v charge qg qg s qg d v ds v gs r g r l v dd 10 v v ds v gs 10 % 90 % td ( on ) t on tr td ( off ) t off t f v ds r g v dd 10 v l tp i d bv dss i as v dd tp time v ds (t) i d(t) eas = 1 - 2 li as 2 bv dss bv dss v dd same?type as?dut gate?charge?test?circuit?&?waveform resistive?switching?test?circuit?&?waveform unclamped?inductive?switching?test?circuit?&?waveform dut dut dut www.datasheet.co.kr datasheet pdf - http://www..net/
svd8n60t/SVD8N60F hangzhou?silan?microelectronics?co.,ltd rev:1.0?????????????2009.07.09 http://www.silan.com.cn ??????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????page?6?of?7 package?outline to-220-3l(one) unit:?mm to-220-3l(two) unit:?mm 6 . 1 0 ~ 6 . 8 0 1 3 . 1 0 . 5 1 5 . 1 ~ 1 5 . 9 3 . 9 5 m a x www.datasheet.co.kr datasheet pdf - http://www..net/
svd8n60t/SVD8N60F hangzhou?silan?microelectronics?co.,ltd rev:1.0?????????????2009.07.09 http://www.silan.com.cn ??????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????page?7?of?7 package?outline?(continued) to-220f-3l(one) unit:?mm a l 1 2 . 6 ~ 1 3 . 8 1 2 . 4 0 . 4 6 . 7 0 0 . 2 0 to-220f-3l(two) unit:?mm www.datasheet.co.kr datasheet pdf - http://www..net/
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